SI2312BDS-T1-E3
MOSFET N-CH 20V 3.9A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2312BDS-T1-E3 is an N-Channel power MOSFET with a drain-source voltage (Vdss) of 20 V. This device features low on-resistance (Rds On) of 31mOhm maximum at 5A and 4.5V Vgs. The continuous drain current (Id) is rated at 3.9A at 25°C, with a maximum power dissipation of 750mW at 25°C. Optimized for efficient switching, it operates with a gate-source voltage range of ±8V, and has a threshold voltage (Vgs(th)) of 850mV maximum at 250µA. The gate charge (Qg) is 12 nC maximum at 4.5V Vgs, and it supports drive voltages from 1.8V to 4.5V. The SI2312BDS-T1-E3 is supplied in a SOT-23-3 (TO-236) surface-mount package and is available on cut tape. Applications include power management in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |