SI2312BDS-T1-BE3
N-CHANNEL 20-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel MOSFET, part number SI2312BDS-T1-BE3, offers a 20V drain-to-source breakdown voltage and a continuous drain current of 3.9A at 25°C. This surface-mount device, housed in a SOT-23-3 (TO-236) package, features a low on-resistance of 31mOhm at 5A and 4.5V Vgs. The gate charge is specified at a maximum of 12 nC at 4.5V. The device supports drive voltages ranging from 1.8V to 4.5V and has a maximum Vgs of ±8V. With a maximum power dissipation of 750mW at 25°C, it is suitable for operation across a wide temperature range of -55°C to 150°C. This Vishay Siliconix component is commonly employed in power management, battery charging, and general-purpose switching applications within the consumer electronics and industrial sectors. Packaged in Digi-Reel®.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
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