SI2311DS-T1-GE3
MOSFET P-CH 8V 3A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2311DS-T1-GE3 is a P-Channel Power MOSFET designed for efficient power management. This component features a low Drain-Source Voltage (Vdss) of 8 V and a continuous Drain Current (Id) of up to 3 A at 25°C. The Rds(on) is specified at a maximum of 45 mOhm at 3.5 A, 4.5 V, ensuring low conduction losses. Optimized for low gate charge, the maximum gate charge (Qg) is 12 nC at 4.5 V. The device operates with drive voltages ranging from 1.8 V to 4.5 V. It is housed in a compact SOT-23-3 (TO-236) surface-mount package, rated for a maximum power dissipation of 710 mW. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in consumer electronics and portable devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 710mW (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 4 V |
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