SI2311DS-T1-E3
MOSFET P-CH 8V 3A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2311DS-T1-E3 is a P-Channel TrenchFET® MOSFET designed for efficient power management. This device features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 3A at 25°C. The low Rds(on) of 45mOhm is achieved at 3.5A and 4.5V Vgs, with a typical gate drive voltage range of 1.8V to 4.5V. Key parameters include a Gate Charge (Qg) of 12 nC at 4.5V Vgs and an Input Capacitance (Ciss) of 970 pF at 4V Vds. The device is packaged in a SOT-23-3 (TO-236) surface-mount case, offering a maximum power dissipation of 710mW. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 710mW (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 4 V |
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