SI2309DS-T1-E3
MOSFET P-CH 60V 1.25A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI2309DS-T1-E3 is a P-Channel power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) rating of 1.25A at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 340mOhm at 1.25A and 10V Vgs, with a threshold voltage (Vgs(th)) of 1V at 250µA minimum. Optimized for high-side load switching and battery management, this MOSFET supports drive voltages from 4.5V to 10V and has a maximum Gate Charge (Qg) of 12 nC at 10V. The SOT-23-3 (TO-236) package allows for surface mounting, and the device operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 1.25W. This component is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.25A (Ta) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
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