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SI2309DS-T1-E3

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SI2309DS-T1-E3

MOSFET P-CH 60V 1.25A SOT23-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI2309DS-T1-E3 is a P-Channel power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) rating of 1.25A at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 340mOhm at 1.25A and 10V Vgs, with a threshold voltage (Vgs(th)) of 1V at 250µA minimum. Optimized for high-side load switching and battery management, this MOSFET supports drive voltages from 4.5V to 10V and has a maximum Gate Charge (Qg) of 12 nC at 10V. The SOT-23-3 (TO-236) package allows for surface mounting, and the device operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 1.25W. This component is suitable for use in consumer electronics and industrial control systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.25A (Ta)
Rds On (Max) @ Id, Vgs340mOhm @ 1.25A, 10V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V

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