SI2309CDS-T1-GE3

MOSFET P-CH 60V 1.6A SOT23-3

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P-Channel 60 V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Rds On (Max) @ Id, Vgs	345mOhm @ 1.25A, 10V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	210 pF @ 30 V