SI2308DS-T1-E3
MOSFET N-CH 60V 2A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI2308DS-T1-E3 is an N-Channel Power MOSFET designed for applications requiring efficient switching. This device features a 60V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C. The low on-resistance, specified as 160mOhm maximum at 2A and 10V Vgs, minimizes conduction losses. The MOSFET is housed in a SOT-23-3 (TO-236) surface mount package, facilitating compact board designs. Key parameters include a gate charge (Qg) of 10nC maximum at 10V Vgs and input capacitance (Ciss) of 240pF maximum at 25V Vds. The operating temperature range is -55°C to 150°C. This component is suitable for use in power management, consumer electronics, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
