SI2308CDS-T1-GE3
MOSFET N-CH 60V 2.6A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Gen IV SI2308CDS-T1-GE3 is an N-Channel Power MOSFET designed for efficient power management solutions. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 2.6A at 25°C (Tc). With a maximum on-resistance (Rds(on)) of 144mOhm at 1.9A and 10V, it offers low conduction losses. The device operates with a gate-source voltage range of ±20V, and a threshold voltage of 3V (Max) at 250µA. Key parameters include a gate charge (Qg) of 4 nC (Max) at 10V and an input capacitance (Ciss) of 105 pF (Max) at 30V. The SI2308CDS-T1-GE3 is packaged in a SOT-23-3 (TO-236) surface-mount configuration and supports a power dissipation of 1.6W (Tc). This MOSFET is suitable for applications in battery management, power supplies, and consumer electronics.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 144mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 105 pF @ 30 V |
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