SI2308BDS-T1-BE3
N-CHANNEL 60-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2308BDS-T1-BE3 is an N-Channel MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 1.9 A at 25°C ambient, and 2.3 A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds On) of 156 mOhm at 1.9 A and 10 Vgs. It is housed in a SOT-23-3 (TO-236) surface mount package, suitable for compact designs. Key parameters include a gate charge (Qg) of 6.8 nC max at 10 Vgs and an input capacitance (Ciss) of 190 pF max at 30 Vds. With a maximum power dissipation of 1.09 W (Ta) and 1.66 W (Tc), this MOSFET is utilized in various industrial and consumer electronics, including power management and signal switching. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta), 2.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.09W (Ta), 1.66W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 30 V |
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