SI2307BDS-T1-GE3
MOSFET P-CH 30V 2.5A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI2307BDS-T1-GE3, offers a 30V drain-source breakdown voltage and a continuous drain current of 2.5A at 25°C ambient. This surface-mount device, housed in a SOT-23-3 (TO-236) package, features a maximum power dissipation of 750mW (Ta). The on-resistance (Rds On) is specified at a maximum of 78mOhm at 3.2A and 10V gate-source voltage. Key parameters include a gate charge of 15nC at 10V and input capacitance (Ciss) of 380pF at 15V. It operates across a temperature range of -55°C to 150°C. This component is suitable for power management applications in the industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 15 V |
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