SI2307BDS-T1-BE3
P-CHANNEL 30-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number SI2307BDS-T1-BE3, offers a 30 V drain-to-source voltage rating. This surface mount device, housed in a SOT-23-3 (TO-236) package, features a maximum continuous drain current of 2.5 A at 25°C and a maximum power dissipation of 750 mW. The resistance between drain and source (Rds On) is a maximum of 78 mOhm at 3.2 A, 10 V. Gate drive voltages range from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V. Key electrical characteristics include a maximum input capacitance (Ciss) of 380 pF at 15 V and a maximum gate charge (Qg) of 15 nC at 10 V. The threshold voltage (Vgs(th)) is 3 V at 250 µA. This component is suitable for applications in automotive and industrial sectors. It operates across a temperature range of -55°C to 150°C (TJ). The product is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 15 V |
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