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SI2307BDS-T1-BE3

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SI2307BDS-T1-BE3

P-CHANNEL 30-V (D-S) MOSFET

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel MOSFET, part number SI2307BDS-T1-BE3, offers a 30 V drain-to-source voltage rating. This surface mount device, housed in a SOT-23-3 (TO-236) package, features a maximum continuous drain current of 2.5 A at 25°C and a maximum power dissipation of 750 mW. The resistance between drain and source (Rds On) is a maximum of 78 mOhm at 3.2 A, 10 V. Gate drive voltages range from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V. Key electrical characteristics include a maximum input capacitance (Ciss) of 380 pF at 15 V and a maximum gate charge (Qg) of 15 nC at 10 V. The threshold voltage (Vgs(th)) is 3 V at 250 µA. This component is suitable for applications in automotive and industrial sectors. It operates across a temperature range of -55°C to 150°C (TJ). The product is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Rds On (Max) @ Id, Vgs78mOhm @ 3.2A, 10V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 15 V

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