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SI2305DS-T1-E3

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SI2305DS-T1-E3

MOSFET P-CH 8V 3.5A SOT23-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel MOSFET, part number SI2305DS-T1-E3, offers an 8V drain-source breakdown voltage and a continuous drain current of 3.5A at 25°C (Ta). This device features a low on-resistance of 52mOhm maximum at 3.5A and 4.5V Vgs. The gate threshold voltage is specified at 800mV maximum with a 250µA drain current. Input capacitance (Ciss) is a maximum of 1245pF at 4V, and gate charge (Qg) is 15nC maximum at 4.5V Vgs. Packaged in a SOT-23-3 (TO-236) surface mount configuration, this MOSFET is commonly utilized in automotive, industrial, and consumer electronics applications requiring efficient power switching. The device is supplied in Cut Tape (CT) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs52mOhm @ 3.5A, 4.5V
FET Feature-
Vgs(th) (Max) @ Id800mV @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)8 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1245 pF @ 4 V

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