SI2305DS-T1-E3
MOSFET P-CH 8V 3.5A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number SI2305DS-T1-E3, offers an 8V drain-source breakdown voltage and a continuous drain current of 3.5A at 25°C (Ta). This device features a low on-resistance of 52mOhm maximum at 3.5A and 4.5V Vgs. The gate threshold voltage is specified at 800mV maximum with a 250µA drain current. Input capacitance (Ciss) is a maximum of 1245pF at 4V, and gate charge (Qg) is 15nC maximum at 4.5V Vgs. Packaged in a SOT-23-3 (TO-236) surface mount configuration, this MOSFET is commonly utilized in automotive, industrial, and consumer electronics applications requiring efficient power switching. The device is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 3.5A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1245 pF @ 4 V |
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