SI2305ADS-T1-GE3
MOSFET P-CH 8V 5.4A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-channel MOSFET, part number SI2305ADS-T1-GE3. This device features an 8V drain-source breakdown voltage and a continuous drain current of 5.4A at 25°C. It offers a low on-resistance of 40mOhm maximum at 4.1A and 4.5V gate-source voltage. The SI2305ADS-T1-GE3 is housed in a SOT-23-3 (TO-236) surface-mount package. Key parameters include a gate charge of 15 nC maximum at 4.5V and input capacitance of 740 pF maximum at 4V. Maximum power dissipation is 960mW (ambient) or 1.7W (case). Operating temperature range is -50°C to 150°C. This component is commonly utilized in power management and load switching applications across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 4 V |
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