SI2304BDS-T1-GE3
MOSFET N-CH 30V 2.6A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2304BDS-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 2.6A at 25°C. The SOT-23-3 (TO-236) package offers a surface mount solution with a maximum power dissipation of 750mW. Key electrical characteristics include a maximum on-resistance (Rds On) of 70mOhm at 2.5A and 10V drive, and a typical gate charge (Qg) of 4 nC at 5V. With an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in consumer electronics, industrial automation, and power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 15 V |
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