SI2304BDS-T1-E3
MOSFET N-CH 30V 2.6A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2304BDS-T1-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 30 V drain-source breakdown voltage and a continuous drain current capability of 2.6 A at 25°C, with a maximum power dissipation of 750 mW. The device exhibits a low on-resistance of 70 mOhm maximum at 2.5 A and 10 V Vgs, and a gate charge of 4 nC maximum at 5 V. Designed for surface mounting in a SOT-23-3 package (TO-236-3), it operates across an industrial temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power management, consumer electronics, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 15 V |
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