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SI2304BDS-T1-BE3

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SI2304BDS-T1-BE3

N-CHANNEL 30-V (D-S) MOSFET

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI2304BDS-T1-BE3 is an N-Channel Power MOSFET designed for efficient switching applications. This device features a drain-source breakdown voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 2.6 A at 25°C ambient temperature. The low on-resistance (Rds On) of 70 mOhm at 2.5 A, 10 V gate drive ensures minimal power loss during conduction. With a maximum power dissipation of 750 mW at 25°C ambient, it is suitable for demanding thermal environments. The MOSFET is housed in a SOT-23-3 (TO-236) surface-mount package, facilitating compact board designs. Key electrical parameters include a gate charge (Qg) of 7 nC and input capacitance (Ciss) of 225 pF. This component finds application in power management, consumer electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs70mOhm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds225 pF @ 15 V

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