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SI2303BDS-T1-GE3

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SI2303BDS-T1-GE3

MOSFET P-CH 30V 1.49A SOT23-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI2303BDS-T1-GE3 is a P-Channel MOSFET designed for efficient power management. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 1.49A at 25°C. The device offers a low on-resistance (Rds On) of 200mOhm maximum at 1.7A and 10V Vgs. It is housed in a SOT-23-3 (TO-236) surface mount package, providing a compact solution for space-constrained designs. Key parameters include a maximum power dissipation of 700mW (Ta) and a gate charge (Qg) of 10 nC maximum at 10V Vgs. The operating temperature range spans from -55°C to 150°C. This MOSFET is suitable for applications in consumer electronics, industrial automation, and battery management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.49A (Ta)
Rds On (Max) @ Id, Vgs200mOhm @ 1.7A, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 15 V

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