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SI2303BDS-T1-E3

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SI2303BDS-T1-E3

MOSFET P-CH 30V 1.49A SOT23-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI2303BDS-T1-E3 is a P-Channel Power MOSFET designed for high-efficiency power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 1.49A at 25°C, with a maximum power dissipation of 700mW. The device exhibits a low On-Resistance (Rds On) of 200mOhm at 1.7A and 10V Vgs, optimized for its P-Channel Metal Oxide technology. Operating across a temperature range of -55°C to 150°C, it is housed in a SOT-23-3 (TO-236) surface-mount package. Key electrical characteristics include a Gate Charge (Qg) of 10 nC at 10V and Input Capacitance (Ciss) of 180 pF at 15V. The SI2303BDS-T1-E3 is commonly utilized in automotive, industrial, and consumer electronics for switching and power control functions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.49A (Ta)
Rds On (Max) @ Id, Vgs200mOhm @ 1.7A, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 15 V

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