SI2303BDS-T1-E3
MOSFET P-CH 30V 1.49A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2303BDS-T1-E3 is a P-Channel Power MOSFET designed for high-efficiency power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 1.49A at 25°C, with a maximum power dissipation of 700mW. The device exhibits a low On-Resistance (Rds On) of 200mOhm at 1.7A and 10V Vgs, optimized for its P-Channel Metal Oxide technology. Operating across a temperature range of -55°C to 150°C, it is housed in a SOT-23-3 (TO-236) surface-mount package. Key electrical characteristics include a Gate Charge (Qg) of 10 nC at 10V and Input Capacitance (Ciss) of 180 pF at 15V. The SI2303BDS-T1-E3 is commonly utilized in automotive, industrial, and consumer electronics for switching and power control functions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.49A (Ta) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 15 V |
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