SI2303BDS-T1
MOSFET P-CH 30V 1.49A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2303BDS-T1 is a P-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 1.49A at 25°C, with a maximum power dissipation of 700mW (Ta). The On-Resistance (Rds On) is specified at 200mOhm maximum at 1.7A and 10V Vgs. It operates with a gate drive voltage range of 4.5V to 10V, and the threshold voltage (Vgs(th)) is 3V at 250µA. Key capacitances include Input Capacitance (Ciss) of 180pF maximum at 15V Vds and Gate Charge (Qg) of 10nC maximum at 10V Vgs. The device is housed in a SOT-23-3 (TO-236) surface-mount package, supplied on tape and reel. Operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.49A (Ta) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 15 V |
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