SI2302ADS-T1-E3
MOSFET N-CH 20V 2.1A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2302ADS-T1-E3 is an N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 2.1A at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 60mOhm maximum at 3.6A and 4.5V gate-source voltage. It operates with a Vgs(th) of 1.2V maximum at 50µA and supports gate drive voltages from 2.5V to 4.5V. The maximum power dissipation is rated at 700mW (Ta). Key characteristics include an input capacitance (Ciss) of 300pF maximum at 10V and a gate charge (Qg) of 10nC at 4.5V. The SI2302ADS-T1-E3 is housed in a SOT-23-3 (TO-236) surface mount package and is supplied on tape and reel. This MOSFET is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 50µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 10 V |
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