SI2302ADS-T1
MOSFET N-CH 20V 2.1A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI2302ADS-T1 is an N-Channel Power MOSFET designed for efficient power management. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.1A at 25°C. The device offers a low on-resistance of 60mOhm maximum at 3.6A and 4.5V gate-source voltage, with a threshold voltage of 1.2V at 50µA. Key parameters include a maximum power dissipation of 700mW and a gate charge of 10nC at 4.5V. The SI2302ADS-T1 is housed in a compact SOT-23-3 (TO-236) surface-mount package and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in consumer electronics, industrial control systems, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 50µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 10 V |
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