SI2301BDS-T1-E3
MOSFET P-CH 20V 2.2A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI2301BDS-T1-E3, offers a 20V drain-source voltage and 2.2A continuous drain current at 25°C. This surface-mount device in a SOT-23-3 (TO-236) package features a maximum Rds(on) of 100mOhm at 2.8A and 4.5V Vgs. With a power dissipation of 700mW (Ta), it is suitable for applications requiring efficient power switching. Key parameters include a gate charge (Qg) of 10nC at 4.5V and input capacitance (Ciss) of 375pF at 6V. The operating temperature range is -55°C to 150°C. This component finds utility in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 375 pF @ 6 V |
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