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SI2301BDS-T1-BE3

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SI2301BDS-T1-BE3

P-CHANNEL 2.5-V (G-S) MOSFET

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI2301BDS-T1-BE3 is a P-Channel MOSFET designed for power management applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.2A at 25°C. The Rds(On) is specified at a maximum of 100mOhm at 2.8A and 4.5V gate drive. With a 2.5V gate drive capability and a maximum gate-source voltage of ±8V, it offers flexibility in system design. The device is housed in a SOT-23-3 (TO-236) surface mount package, offering a power dissipation of 700mW. Typical applications include battery management, load switching, and power distribution in consumer electronics and industrial control systems. Key electrical characteristics include a maximum input capacitance (Ciss) of 375pF at 6V Vds and a gate charge (Qg) of 10nC at 4.5V Vgs. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Rds On (Max) @ Id, Vgs100mOhm @ 2.8A, 4.5V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id950mV @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds375 pF @ 6 V

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