SI1499DH-T1-E3
MOSFET P-CH 8V 1.6A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI1499DH-T1-E3. This device features a drain-source breakdown voltage (Vdss) of 8 V and a continuous drain current (Id) of 1.6 A at 25°C (Tc). It offers a maximum Rds(On) of 78 mOhm at 2 A and 4.5 V gate-source voltage. The gate charge (Qg) is specified at 16 nC maximum at 4.5 V, with input capacitance (Ciss) at 650 pF maximum at 4 V. Operating from a drive voltage range of 1.2 V to 4.5 V, this SC-70-6 surface mount device has a maximum power dissipation of 2.5 W (Ta) or 2.78 W (Tc) and is rated for operation from -55°C to 150°C (TJ). The Vishay Siliconix SI1499DH-T1-E3 is utilized in applications such as battery management, portable electronics, and power control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 2.78W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 4 V |
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