SI1489EDH-T1-GE3
MOSFET P-CH 8V 2A SOT-363Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI1489EDH-T1-GE3, offers an 8V drain-source breakdown voltage with a continuous drain current capability of 2A at 25°C. This device features a low on-resistance of 48mOhm maximum at 3A and 4.5V Vgs, with a gate charge of 16nC maximum at 4.5V. Designed for surface mounting in a 6-TSSOP, SC-88, SOT-363 package, it dissipates up to 2.8W. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in consumer electronics and portable devices. The drive voltage range is 1.2V to 4.5V, with a maximum gate-source voltage of ±5V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
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