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SI1488DH-T1-E3

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SI1488DH-T1-E3

MOSFET N-CH 20V 6.1A SC70-6

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI1488DH-T1-E3 is a TrenchFET® series N-Channel Power MOSFET designed for efficient power management. This device offers a 20V Drain-Source voltage (Vdss) and a continuous drain current (Id) of 6.1A at 25°C (Tc). With a low on-resistance (Rds On) of 49mOhm maximum at 4.6A and 4.5V Vgs, it minimizes conduction losses. The MOSFET features a gate charge (Qg) of 10 nC maximum at 5V Vgs and an input capacitance (Ciss) of 530 pF maximum at 10V Vds. It supports drive voltages from 1.8V to 4.5V and has a maximum gate-source voltage (Vgs) of ±8V. The SI1488DH-T1-E3 is housed in a compact 6-TSSOP, SC-88, SOT-363 (SC-70-6) package suitable for surface mounting. Power dissipation is rated at 1.5W (Ta) and 2.8W (Tc). This component finds application in various sectors including industrial automation and consumer electronics.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.1A (Tc)
Rds On (Max) @ Id, Vgs49mOhm @ 4.6A, 4.5V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id950mV @ 250µA
Supplier Device PackageSC-70-6
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds530 pF @ 10 V

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