SI1480DH-T1-GE3
MOSFET N-CH 100V 2.6A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI1480DH-T1-GE3 is an N-Channel MOSFET designed for high-efficiency power switching. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 2.6A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 200mOhm at 1.9A and 10V Vgs. With a gate charge (Qg) of 5nC at 10V Vgs and input capacitance (Ciss) of 130pF at 50V Vds, it is optimized for fast switching applications. The MOSFET is housed in a compact SC-70-6 (SOT-363) surface-mount package, suitable for space-constrained designs. Power dissipation is rated at 1.5W (Ta) and 2.8W (Tc). This component is commonly employed in power management, consumer electronics, and industrial automation. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 50 V |
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