SI1480DH-T1-BE3
MOSFET N-CH 100V 2.1A/2.6A SC70Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET N-Channel SI1480DH-T1-BE3. This surface mount device features a 100V drain-source breakdown voltage and a continuous drain current of 2.1A at ambient temperature and 2.6A at case temperature. Maximum power dissipation is 1.5W (Ta) and 2.8W (Tc). The N-Channel MOSFET exhibits a maximum on-resistance of 200mOhm at 1.9A and 10V gate-source voltage. Key parameters include a gate charge of 5 nC (max.) at 10V and input capacitance of 130 pF (max.) at 50V. The component is housed in an SC-70-6 package and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta), 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 50 V |
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