SI1473DH-T1-GE3
MOSFET P-CH 30V 2.7A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI1473DH-T1-GE3, offers a 30V drain-source breakdown voltage and a continuous drain current of 2.7A at 25°C (Tc). This device features a maximum on-resistance of 100mOhm at 2A and 10V Vgs, with a gate charge of 6.2nC at 4.5V. The input capacitance (Ciss) is rated at 365pF maximum at 15V. Designed for surface mounting in the SC-70-6 package, it operates within an extended temperature range of -55°C to 150°C. Power dissipation is 1.5W (Ta) and 2.78W (Tc). This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 2.78W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 15 V |
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