SI1472DH-T1-E3
MOSFET N-CH 30V 5.6A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1472DH-T1-E3 is an N-Channel TrenchFET® power MOSFET. This component offers a 30 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.6 A at 25°C (Tc). The device features a maximum Rds(On) of 57 mOhm at 4.2 A and 10 V Vgs, with a 4.5 V to 10 V drive voltage range. With a gate charge (Qg) of 11 nC at 10 V and input capacitance (Ciss) of 380 pF at 15 V, this MOSFET is suitable for various power management applications. The SI1472DH-T1-E3 is packaged in an SC-70-6 (SOT-363) surface mount configuration and supports an operating temperature range of -55°C to 150°C. Power dissipation is rated at 1.5 W (Ta) and 2.8 W (Tc). This component finds application in consumer electronics and industrial equipment.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 4.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 15 V |
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