SI1470DH-T1-GE3
MOSFET N-CH 30V 5.1A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1470DH-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 5.1A (Tc) at 25°C. The device exhibits a low on-resistance of 66mOhm maximum at 3.8A and 4.5V Vgs, facilitating reduced conduction losses. Operating with drive voltages as low as 2.5V, it offers flexibility in power management designs. The SC-70-6 package, a 6-TSSOP, SC-88, SOT-363, supports surface mounting. With a maximum power dissipation of 1.5W (Ta) and 2.8W (Tc), and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for demanding environments. Key parameters include a gate charge of 7.5 nC maximum and input capacitance of 510 pF maximum. This device finds application in industrial automation, consumer electronics, and power supply circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 66mOhm @ 3.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 15 V |
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