SI1470DH-T1-E3
MOSFET N-CH 30V 5.1A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI1470DH-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for efficient switching applications. This device features a 30V drain-source voltage and a continuous drain current of 5.1A at 25°C (Tc). With a maximum on-resistance of 66mOhm at 3.8A and 4.5V gate-source voltage, it offers low conduction losses. Key parameters include a gate charge of 7.5 nC maximum at 5V and input capacitance of 510 pF maximum at 15V. The SI1470DH-T1-E3 is available in a compact SC-70-6 (SOT-363) surface-mount package, suitable for space-constrained designs. It operates across a temperature range of -55°C to 150°C (TJ) and supports drive voltages from 2.5V to 4.5V. Power dissipation is rated at 1.5W (Ta) and 2.8W (Tc). This component is utilized in industries such as industrial and automotive electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 66mOhm @ 3.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 15 V |
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