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SI1450DH-T1-GE3

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SI1450DH-T1-GE3

MOSFET N-CH 8V 4.53A/6.04A SC70

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI1450DH-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This component offers a Drain-Source Voltage (Vdss) of 8V and a continuous drain current (Id) of 4.53A at 25°C ambient, or 6.04A at 25°C case temperature. With a maximum on-resistance (Rds On) of 47mOhm at 4A and 4.5V Vgs, it facilitates efficient power delivery. The device features a low gate charge of 7.05 nC (max) at 5V Vgs and an input capacitance (Ciss) of 535 pF (max) at 4V Vds. Operating across a wide temperature range from -55°C to 150°C, this MOSFET is housed in a compact SC-70-6 package. Its robust performance makes it suitable for use in portable electronics, power management solutions, and battery-powered devices. The Vishay Siliconix TrenchFET® technology ensures superior thermal performance and reduced power loss.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.53A (Ta), 6.04A (Tc)
Rds On (Max) @ Id, Vgs47mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)1.56W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSC-70-6
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±5V
Drain to Source Voltage (Vdss)8 V
Gate Charge (Qg) (Max) @ Vgs7.05 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds535 pF @ 4 V

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