SI1450DH-T1-E3
MOSFET N-CH 8V 4.53A/6.04A SC70Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SI1450DH-T1-E3, offers an 8V drain-source breakdown voltage. This device features low on-resistance of 47mOhm maximum at 4A, 4.5V Vgs, with a Vgs(th) of 1V maximum at 250µA. Continuous drain current is rated at 4.53A at 25°C ambient and 6.04A at 25°C case temperature. Maximum power dissipation is 1.56W (Ta) and 2.78W (Tc). Key parameters include a gate charge of 7.05 nC maximum and input capacitance of 535 pF maximum. This MOSFET is housed in a compact SC-70-6 package and is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.53A (Ta), 6.04A (Tc) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta), 2.78W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.05 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 4 V |
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