SI1433DH-T1-GE3
MOSFET P-CH 30V 1.9A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI1433DH-T1-GE3. This device features a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current of 1.9A (Ta) at 25°C. The Rds On is specified at a maximum of 150mOhm at 2.2A and 10V. It operates with a gate drive range from 4.5V to 10V and has a maximum gate charge of 5nC at 4.5V. The MOSFET is housed in a compact SC-70-6 (SOT-363) surface-mount package and offers a maximum power dissipation of 950mW (Ta). Designed for efficient switching, this component is suitable for applications in consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 950mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 100µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
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