SI1433DH-T1-E3
MOSFET P-CH 30V 1.9A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1433DH-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management. This device features a 30V drain-source breakdown voltage and a continuous drain current rating of 1.9A (Ta) at 25°C, with a maximum power dissipation of 950mW (Ta). The SC-70-6 (SOT-363) package offers a compact footprint suitable for surface mounting. Key electrical characteristics include a maximum on-resistance of 150mOhm at 2.2A and 10V, and a gate charge of 5nC at 4.5V. Operating across a wide temperature range of -55°C to 150°C (TJ), the SI1433DH-T1-E3 is utilized in applications such as battery management, load switching, and power supply circuits within the consumer electronics and industrial automation sectors. It supports drive voltages from 4.5V to 10V and has a ±20V gate-source voltage limit.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 950mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 100µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
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