Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

SI1428EDH-T1-GE3

Banner
productimage

SI1428EDH-T1-GE3

MOSFET N-CHANNEL 30V 4A SC70-6

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-CHANNEL SI1428EDH-T1-GE3. This N-Channel MOSFET features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 4A (Tc) at 25°C. The device offers a low on-resistance (Rds On) of 45mOhm maximum at 3.7A and 10V Vgs. With a gate charge (Qg) of 13.5 nC maximum at 10V, it is suitable for various power management applications. The SC-70-6 package (6-TSSOP, SC-88, SOT-363) supports surface mounting and operates across a wide temperature range of -55°C to 150°C (TJ). This component is utilized in industries such as consumer electronics and industrial automation. The drive voltage ranges from 2.5V to 10V.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs45mOhm @ 3.7A, 10V
FET Feature-
Power Dissipation (Max)2.8W (Tc)
Vgs(th) (Max) @ Id1.3V @ 250µA
Supplier Device PackageSC-70-6
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13.5 nC @ 10 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SIJH5700E-T1-GE3

N-CHANNEL 150 V (D-S) 175C MOSFE

product image
SIHA14N60E-GE3

N-CHANNEL 600V

product image
IRL540S

MOSFET N-CH 100V 28A D2PAK