SI1426DH-T1-GE3
MOSFET N-CH 30V 2.8A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1426DH-T1-GE3 is a TrenchFET® series N-Channel power MOSFET. This component features a 30V drain-source voltage and a continuous drain current of 2.8A at 25°C ambient temperature, with a maximum power dissipation of 1W. The Rds(on) is specified at 75mOhm maximum at 3.6A and 10V gate drive. It requires a gate drive voltage between 4.5V and 10V, with a threshold voltage of 2.5V at 250µA. The gate charge (Qg) is 3nC maximum at 4.5V. This device is packaged in an SC-70-6 (SC-88) surface-mount case and operates across a wide temperature range of -55°C to 150°C. Commonly employed in power management and load switching applications within the computing, industrial, and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V |