SI1426DH-T1-E3
MOSFET N-CH 30V 2.8A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI1426DH-T1-E3 is a 30V N-channel power MOSFET designed for efficient power switching applications. This component features a low on-resistance of 75mOhm maximum at 3.6A and 10V Vgs, and a continuous drain current of 2.8A (Ta). The device operates with a gate drive range of 4.5V to 10V, and a maximum gate-source voltage of ±20V. Gate charge (Qg) is specified at a maximum of 3nC at 4.5V Vgs. With a maximum power dissipation of 1W (Ta) and an operating temperature range of -55°C to 150°C, the SI1426DH-T1-E3 is suitable for demanding environments. The SC-70-6 package (also known as SOT-363 or SC-88) is ideal for space-constrained designs, commonly found in portable electronics and power management circuits. This Vishay Siliconix MOSFET is delivered in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
