SI1422DH-T1-GE3
MOSFET N-CH 12V 4A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI1422DH-T1-GE3 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 12V drain-source breakdown voltage and a continuous drain current capability of 4A (Tc). The device exhibits a low on-resistance (Rds On) of 26mOhm at 5.1A and 4.5V Vgs, ensuring minimal conduction losses. Key electrical parameters include a maximum gate charge (Qg) of 20 nC at 8V Vgs and an input capacitance (Ciss) of 725 pF at 6V Vds. With a maximum power dissipation of 1.56W (Ta) and 2.8W (Tc), it is suitable for operation across a wide temperature range from -55°C to 150°C (TJ). The SC-70-6 package facilitates surface mounting, making it ideal for compact designs in industries such as consumer electronics, automotive, and industrial control. Drive voltages range from 1.8V to 4.5V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta), 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 725 pF @ 6 V |