SI1419DH-T1-E3
MOSFET P-CH 200V 300MA SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI1419DH-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 300mA at 25°C (Ta). The low on-resistance of 5 Ohm is achieved at 400mA drain current and 10V gate-source voltage. It is supplied in a compact SC-70-6 surface mount package, suitable for space-constrained designs. Key parameters include a maximum gate charge (Qg) of 6.2 nC at 10V and a threshold voltage (Vgs(th)) of 4.5V at 100µA. The device operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management solutions across industrial and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 400mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
