SI1417EDH-T1-GE3
MOSFET P-CH 12V 2.7A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1417EDH-T1-GE3 is a P-channel TrenchFET® power MOSFET designed for efficient switching applications. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 2.7A at 25°C. The Rds(on) is specified at a maximum of 85mOhm at 3.3A and 4.5V gate-source voltage. It operates with a gate drive voltage range from 1.8V to 4.5V and has a gate charge (Qg) of 8nC at 4.5V. The MOSFET is packaged in an SC-70-6 (SOT-363) surface-mount configuration and supports tape and reel packaging. With a maximum power dissipation of 1W (Ta) and an operating temperature range of -55°C to 150°C, this component is suitable for use in portable electronics and power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |