SI1417EDH-T1-E3
MOSFET P-CH 12V 2.7A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI1417EDH-T1-E3, offers a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.7A at 25°C. This device features a low on-resistance (Rds On) of 85mOhm maximum at 3.3A and 4.5V Vgs, with a drive voltage range from 1.8V to 4.5V. The gate charge (Qg) is a maximum of 8nC at 4.5V Vgs. The SC-70-6 package, also known as SOT-363 or SC-88, is surface mountable and designed for efficient thermal performance with a maximum power dissipation of 1W (Ta). Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
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