SI1414DH-T1-GE3
MOSFET N-CH 30V 4A SOT-363Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI1414DH-T1-GE3 is a 30V N-channel Power MOSFET designed for efficient power management. This device offers a continuous drain current of 4A (Tc) with a maximum on-resistance of 46mOhm at 4A and 4.5V Vgs. Key parameters include a gate charge of 15 nC (Max) at 8V and input capacitance of 560 pF (Max) at 15V. The MOSFET supports drive voltages from 1.8V to 4.5V and has a maximum gate-source voltage of ±8V. With a power dissipation of 2.8W (Tc), it is suitable for applications requiring low power loss. This component is packaged in a compact SC-70-6 (SOT-363) surface-mount configuration and operates across a temperature range of -55°C to 150°C. It finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 15 V |
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