SI1413EDH-T1-GE3
MOSFET P-CH 20V 2.3A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI1413EDH-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management applications. Featuring a Drain-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 2.3 A at 25°C, this device offers a low on-resistance of 115 mOhm maximum at 2.9 A and 4.5 V gate drive. The SC-70-6 package provides a compact footprint suitable for space-constrained designs. Its operating temperature range of -55°C to 150°C (TJ) ensures robust performance in demanding environments. This MOSFET is commonly utilized in consumer electronics, industrial automation, and battery management systems where efficient switching and low power dissipation are critical. The device supports gate drive voltages from 1.8 V to 4.5 V with a maximum gate-source voltage of ±12 V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 100µA (Min) |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |