SI1413EDH-T1-E3
MOSFET P-CH 20V 2.3A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI1413EDH-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for applications requiring efficient power switching. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.3A at 25°C, with a maximum power dissipation of 1W (Ta). Its low on-resistance of 115mOhm at 2.9A and 4.5V gate drive makes it suitable for battery management, load switching, and power control circuits. The device operates efficiently with a gate-source threshold voltage (Vgs(th)) of 450mV (min) and a gate charge (Qg) of 8nC (max) at 4.5V. Packaged in a compact SC-70-6 (SOT-363) surface-mount package and supplied on tape and reel, the SI1413EDH-T1-E3 is ideal for space-constrained designs in consumer electronics, industrial automation, and automotive systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 100µA (Min) |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
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