SI1413DH-T1-E3
MOSFET P-CH 20V 2.3A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI1413DH-T1-E3, offers a 20V drain-source breakdown voltage and a continuous drain current of 2.3A (Ta). This device features a low on-resistance of 115mOhm at 2.9A and 4.5V Vgs, with a gate charge of 8.5 nC at 4.5V. The SI1413DH-T1-E3 is housed in a compact SC-70-6 (SOT-363) surface-mount package and supports a maximum power dissipation of 1W (Ta). Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 100µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 4.5 V |
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