SI1411DH-T1-E3
MOSFET P-CH 150V 420MA SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI1411DH-T1-E3, offers a 150V drain-source breakdown voltage. This surface mount device features a continuous drain current of 420mA at 25°C ambient and a maximum power dissipation of 1W ambient. The Rds On is specified at 2.6 Ohms maximum at 500mA and 10V gate drive. Key parameters include a gate charge of 6.3 nC maximum at 10V and a threshold voltage of 4.5V maximum at 100µA. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management and general purpose switching applications across various industrial sectors. It is supplied in SC-70-6 packaging on a tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 420mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 10 V |
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