SI1411DH-T1-BE3
MOSFET P-CH 150V 420MA SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI1411DH-T1-BE3, offers a 150V drain-source breakdown voltage and 420mA continuous drain current at 25°C ambient. This surface-mount device, packaged in an SC-70-6 (SOT-363), features a maximum Rds(on) of 2.6 Ohms at 500mA and 10V Vgs. The MOSFET exhibits a gate charge of 6.3 nC maximum at 10V and a gate-source threshold voltage of 4.5V maximum at 100µA. Its power dissipation is rated at 1W ambient. Operating across a temperature range of -55°C to 150°C, this component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 420mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | SC-70-6 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 10 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
