SI1410EDH-T1-E3
MOSFET N-CH 20V 2.9A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI1410EDH-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.9A at 25°C ambient temperature, with a maximum power dissipation of 1W. The low on-resistance of 70mOhm at 3.7A and 4.5V gate drive makes it suitable for various power management tasks. It operates with gate drive voltages from 1.8V to 4.5V and has a maximum gate-source voltage of ±12V. The device is supplied in a compact SC-70-6 (SOT-363) surface-mount package, ideal for space-constrained designs. Key parameters include a maximum gate charge of 8nC at 4.5V and a threshold voltage of 450mV at 250µA. This component is commonly employed in portable electronics and power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
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